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20072023
most citedLow-Frequency 1/f Noise in Molybdenum Disulfide Transistors

137 citations · 1.2k across the 57 of their papers we have counts for

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Showing 2020 · physics.app-phShow all

5 papers · 2 filters

physics.app-ph2020★ 34 cited

Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene

Yuhui Zhang, Michael S. Shur

The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection…

physics.app-ph2020★ 7 cited

Ultrashort Pulse Detection and Response Time Analysis Using Plasma-wave Terahertz Field Effect Transistors

Yuhui Zhang, Michael S. Shur

We report on the response characteristics of plasmonic terahertz field-effect transistors (TeraFETs) fed with femtosecond and picosecond pulses. Varying the pulse width (tpw) from…

physics.app-ph2020★ 23 cited

p-Diamond, Si, GaN and InGaAs TeraFETs

Yuhui Zhang, Michael S. Shur

p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (TH…

physics.app-ph2020

High Brightness Lasing at Sub-micron Enabled by Droop-Free Fin Light-Emitting Diodes

Babak Nikoobakht, Robin P. Hansen, Yuqin Zong +3

Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the o…

physics.app-ph2020

Plasmonic FET Terahertz Spectrometer

Xueqing Liu, Trond Ytterdal, Michael Shur

We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrome…