activity
20062016
most citedPiezoresistance in Silicon and its nanostructures

63 citations · 187 across the 9 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

6 papers · 1 filter

cond-mat.mes-hall2015★ 14 cited

Geometric and chemical components of the giant piezoresistance in silicon nanowires

M. McClarty, N. Jegenyes, M. Gaudet +5

A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (…

cond-mat.mes-hall2013★ 15 cited

The effect of Pauli blockade on spin-dependent diffusion in a degenerate electron gas

F. Cadiz, D. Paget, A. C. H. Rowe

Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polar…

cond-mat.mes-hall2013★ 63 cited

Piezoresistance in Silicon and its nanostructures

A. C. H. Rowe

Piezoresistance is the change in the electrical resistance, or more specifically the resistivity, of a solid induced by an applied mechanical stress. The origin of this effect in b…

cond-mat.mes-hall2010★ 4 cited

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

D. Vu, H. F. Jurca, F. Maroun +6

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) re…

cond-mat.mes-hall2010★ 43 cited

Imaging charge and spin diffusion of minority carriers in GaAs

I. Favorskiy, D. Vu, E. Peytavit +3

Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equi…

cond-mat.mes-hall2007★ 22 cited

Geometrical dependence of decoherence by electronic interactions in a GaAs/GaAlAs square network

M. Ferrier, A. C. H. Rowe, S. Gueron +3

We investigate weak localization in metallic networks etched in a two dimensional electron gas between mK and mK when electron-electron (e-e) interaction is the domina…