63 citations · 187 across the 9 of their papers we have counts for
9 papers
Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
F. Cadiz, D. Lagarde, P. Renucci +5
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At l…
Geometric and chemical components of the giant piezoresistance in silicon nanowires
M. McClarty, N. Jegenyes, M. Gaudet +5
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (…
The effect of Pauli blockade on spin-dependent diffusion in a degenerate electron gas
F. Cadiz, D. Paget, A. C. H. Rowe
Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polar…
Piezoresistance in Silicon and its nanostructures
A. C. H. Rowe
Piezoresistance is the change in the electrical resistance, or more specifically the resistivity, of a solid induced by an applied mechanical stress. The origin of this effect in b…
Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt
D. Vu, H. F. Jurca, F. Maroun +6
The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) re…
Imaging charge and spin diffusion of minority carriers in GaAs
I. Favorskiy, D. Vu, E. Peytavit +3
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equi…
GaAs(111)A and B in hydrazine sulfide solutions : extreme polarity dependence of surface adsorption processes
V. L. Berkovits, V. P. Ulin, O. E. Tereshchenko +5
Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by ni…
Geometrical dependence of decoherence by electronic interactions in a GaAs/GaAlAs square network
M. Ferrier, A. C. H. Rowe, S. Gueron +3
We investigate weak localization in metallic networks etched in a two dimensional electron gas between mK and mK when electron-electron (e-e) interaction is the domina…
Fowler-Nordheim-like local injection of photoelectrons from a silicon tip
A. C. H. Rowe, D. Paget
Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range…