102 citations · 132 across the 5 of their papers we have counts for
5 papers
Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations
Kingsley O. Egbo, Chao Ping Liu, Chinedu E. Ekuma +1
Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conduc…
Excitation Wavelength Dependent Reversible Photoluminescence Peak in Iodide Perovskites
Wayesh Qarony, Mohammad Kamal Hossain, Mohammad Ismail Hossain +8
Halide perovskites have indisputably exceptional optical and electronic properties, which are attractive for next-generation optoelectronic device technologies. We report on a reve…
THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN
J. N. Heyman, E. M. Weiss, J. R. Rollag +5
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excite…
Composition determination of quaternary GaAsPN layers from single XRD measurement of quasi-forbidden (002) reflection
J. -M. Tilli, H. Jussila, K. M. Yu +2
GaAsPN layers with a thickness of 30nm were grown on GaP substrates with metalorganic vapor phase epitaxy to study the feasibility of a single X-ray diffraction (XRD) measurement f…
Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors
Peter R. Stone, Jeffrey W. Beeman, Kin M. Yu +1
We have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with…