most citedTopological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding

12 citations · 30 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2025★ 12 cited

Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding

Jie Pan, Huanhuan Wang, Lin Zou +10

Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilay…

cond-mat.mes-hall2025★ 5 cited

Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

Lihao Zhang, Miao He, Xiaoyu Wang +8

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observ…

cond-mat.mes-hall2024★ 4 cited

Bias Voltage Driven Tunneling Magnetoresistance Polarity Reversal in 2D Stripy Antiferromagnet CrOCl

Lihao Zhang, Xiaoyu Wang, Qi Li +6

Atomically thin materials with coupled magnetic and electric polarization are critical for developing energy-efficient and high-density spintronic devices, yet they remain scarce d…

cond-mat.mes-hall2024★ 9 cited

Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS

Pengyuan Shi, Xiaoyu Wang, Lihao Zhang +13

Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscilla…

cond-mat.mtrl-sci2024

Room-temperature intrinsic ferromagnetism of two-dimensional Na2Cl crystals originated by s- and p-orbitals

Yimin Zhao, Yunzhang Li, Liang Chen +15

Ferromagnetism, as one of the most valuable properties of materials, has attracted sustained and widespread interest in basic and applied research from ancient compasses to modern…