14 citations · 24 across the 8 of their papers we have counts for
11 papers
Parallax Depth Sectioning and 3D Reconstruction in 4D-STEM
Desheng Ma, Chia-Hao Lee, Zixiao Shi +2
Three-dimensional (3D) information is encoded in four-dimensional scanning transmission electron microscopy (4D-STEM) through parallax between the virtual images formed at each det…
Scalable Bayesian Optimization of Composite Functions for Image-Based Inverse Problems in Materials Characterization
Dasol Yoon, Poompol Buathong, Chia-Hao Lee +3
Estimating physical parameters from scientific images is a common inverse problem in materials characterization that often relies on expensive physics-based simulations. In electro…
Three-dimensional imaging of oxygen dopant distribution in SrCuO by electron ptychography
Hongbin Yang, Jinkwon Kim, Desheng Ma +3
Oxygen dopants play a critical role in tuning the properties of cuprate superconductors, yet it is challenging to visualize them at the atomic scale. Here, we use multislice electr…
Using Aberrations to Improve Dose-Efficient Tilt-corrected 4D-STEM Imaging
Desheng Ma, David A Muller, Steven E Zeltmann
Tilt-corrected imaging methods in four-dimensional scanning transmission electron microscopy (4D-STEM) have recently emerged as a new class of direct ptychography methods that are…
Detective quantum efficiency based comparison of HRTEM and ptychography phase imaging
Felix Bennemann, Angus I. Kirkland, David A. Muller +1
High-resolution transmission electron microscopy (HRTEM) is an important method for imaging beam sensitive materials often under cryo conditions. Electron ptychography in the scann…
Improving Multislice Electron Ptychography with a Generative Prior
Christian K. Belardi, Chia-Hao Lee, Yingheng Wang +4
Multislice electron ptychography (MEP) is an inverse imaging technique that computationally reconstructs the highest-resolution images of atomic crystal structures from diffraction…
3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography
Shake Karapetyan, Steven E. Zeltmann, Glen Wilk +3
To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm re…
Information in 4D-STEM: Where it is, and How to Use it
Desheng Ma, Guanxing Li, David A Muller +1
Contrast transfer mechanisms for electron scattering have been extensively studied in transmission electron microscopy. Here we revisit H. Rose's generalized contrast formalism fro…
PtyRAD: A High-performance and Flexible Ptychographic Reconstruction Framework with Automatic Differentiation
Chia-Hao Lee, Steven E. Zeltmann, Dasol Yoon +2
Electron ptychography has recently achieved unprecedented resolution, offering valuable insights across diverse material systems, including in three dimensions. However, high-quali…
Emittance Minimization for Aberration Correction II: Physics-informed Bayesian Optimization of an Electron Microscope
Desheng Ma, Steven E. Zeltmann, Chenyu Zhang +6
Aberration-corrected Scanning Transmission Electron Microscopy (STEM) has become an essential tool in understanding materials at the atomic scale. However, tuning the aberration co…
Emittance Minimization for Aberration Correction I: Aberration correction of an electron microscope without knowing the aberration coefficients
Desheng Ma, Steven E. Zeltmann, Chenyu Zhang +6
Precise alignment of the electron beam is critical for successful application of scanning transmission electron microscopes (STEM) to understanding materials at atomic level. Despi…