1 citations · 1 across the 5 of their papers we have counts for
6 papers
Three-Dimensional Imaging of High-Density Dislocation Networks and Their Interactions using Multislice Electron Ptychography
Eegene Chung, Anand Ithepalli, Naomi Pieczulewski +6
Development of novel devices often involve combining functional materials and substrates, each chosen for particular physical properties such as low-loss or thermal conductivity. T…
Growth and Interface Engineering of Superconducting TiN on Sapphire by Thermal-Laser Epitaxy
Anthony Hyatt, Anand Ithepalli, Eegene Clara Chung +6
Thermal-laser epitaxy (TLE) extends the accessible pressure, temperature, and growth-rate regimes of conventional molecular-beam epitaxy, enabling in situ laser annealing, high-pur…
High-Q superconducting microwave resonators using MBE titanium nitride
Anand Ithepalli, Haoran Lu, Eegene Clara Chung +9
Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking cu…
Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
Anand Ithepalli, Saumya Vashishtha, Naomi Pieczulewski +7
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of , $2^…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Quantum oscillations of holes in GaN
Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang +12
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radi…