31 citations · 62 across the 10 of their papers we have counts for
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Three-Dimensional Imaging of High-Density Dislocation Networks and Their Interactions using Multislice Electron Ptychography
Eegene Chung, Anand Ithepalli, Naomi Pieczulewski +6
Development of novel devices often involve combining functional materials and substrates, each chosen for particular physical properties such as low-loss or thermal conductivity. T…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant +6
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Growth of on by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
J. P. McCandless, D. Rowe, N. Pieczulewski +8
We report the growth of on -plane by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We…
Silicon-doped -GaO films grown at 1 m/h by suboxide molecular-beam epitaxy
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow -GaO at a growth rate of ~1 m/h with control of the silicon doping concentration from 5x10…