31 citations · 62 across the 10 of their papers we have counts for
10 papers
Three-Dimensional Imaging of High-Density Dislocation Networks and Their Interactions using Multislice Electron Ptychography
Eegene Chung, Anand Ithepalli, Naomi Pieczulewski +6
Development of novel devices often involve combining functional materials and substrates, each chosen for particular physical properties such as low-loss or thermal conductivity. T…
Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
Anand Ithepalli, Saumya Vashishtha, Naomi Pieczulewski +7
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of , $2^…
All-nitride superconducting qubits based on atomic layer deposition
Danqing Wang, Yufeng Wu, Naomi Pieczulewski +6
The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Quantum oscillations of holes in GaN
Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang +12
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radi…
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant +6
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks…
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Len van Deurzen, Jashan Singhal, Jimy Encomendero +8
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bul…
Growth of on by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
J. P. McCandless, D. Rowe, N. Pieczulewski +8
We report the growth of on -plane by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We…
Silicon-doped -GaO films grown at 1 m/h by suboxide molecular-beam epitaxy
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow -GaO at a growth rate of ~1 m/h with control of the silicon doping concentration from 5x10…