4 papers
Unveiling the Scaling Potential of Drain Merge through Active (DMtA) in CFETs: Breaking the Super-Via Bottlenecks and Unlocking New PPA Boosters
Jingru Jiang, Haoran Lu, Kairong Guo +11
Drain merge (DM), a super via vertically connecting the common S/D terminals of stacked n/pFETs in Complementary FETs (CFETs), blocks further parasitic optimization and cell scalin…
Design Optimization of Flip FET Standard Cells with Dual-sided Pins for Ultimate Scaling
Rui Gui, Haoran Lu, Jiacheng Sun +7
Recently, we proposed a novel transistor architecture for 3D stacked FETs called Flip FET (FFET), featuring N/P transistors back-to-back stacked and dual-sided interconnects. With…
Overlay-aware Variation Study of Flip FET and Benchmark with CFET
Wanyue Peng, Haoran Lu, Jingru Jiang +5
In this work, we carried out an overlay-aware variation study on Flip FET (FFET) considering the impact on RC parasitics induced by the lithography misalignment in backside process…
From Flip FET to Flip 3D Integration (F3D): Maximizing the Scaling Potential of Wafer Both Sides Beyond Conventional 3D Integration
Heng Wu, Haoran Lu, Wanyue Peng +13
In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-d…