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cond-mat.mtrl-sci2025★ 2 cited
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…
cond-mat.mtrl-sci2025★ 1 cited
Theoretical study of the impact of carrier density screening on Urbach tail energies and optical polarization in (Al,Ga)N quantum well systems
Robert Finn, Michael O'Donovan, Thomas Koprucki +1
Aluminium Gallium Nitride ((Al,Ga)N) presents an ideal platform for designing ultra-violet (UV) light emitters across the entire UV spectral range. However, in the deep-UV spectral…