17 citations · 48 across the 18 of their papers we have counts for
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cond-mat.mes-hall2024★ 3 cited
On the origin of anomalous hysteresis in graphite/boron nitride transistors
Dacen Waters, Derek Waleffe, Ellis Thompson +9
Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtuall…
quant-ph2024★ 10 cited
Intrinsic high-fidelity spin polarization of charged vacancies in hexagonal boron nitride
Wonjae Lee, Vincent S. Liu, Zhelun Zhang +11
The negatively charged boron vacancy () in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. T…
cond-mat.mtrl-sci2024★ 2 cited
Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
J. Plo, A. Pershin, S. Li +18
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and o…