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physics.app-ph2025★ 12 cited
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…
physics.app-ph2025★ 2 cited
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
A. E. Mavropoulis, N. Vasileiadis, P. Normand +4
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament f…