6 citations · 10 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2025★ 1 cited
Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6
This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…
cond-mat.mtrl-sci2025★ 6 cited
Silicon nitride resistance switching MIS cells doped with silicon atoms
A Mavropoulis, N Vasileiadis, C Bonafos +4
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert…
physics.app-ph2025★ 3 cited
Effect of Silicon Atom Doping in SiNx Resistive Switching Films
A Mavropoulis, N Vasileiadis, C Bonafos +4
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impac…