1 citations · 2 across the 2 of their papers we have counts for
2 papers
physics.app-ph2025★ 1 cited
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
AE Mavropoulis, N Vasileiadis, P Normand +4
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…
physics.app-ph2021★ 1 cited
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Nikolaos Vasileiadis, Panagiotis Loukas, Panagiotis Karakolis +7
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile me…