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Enhanced optical properties of MoSe grown by molecular beam epitaxy on hexagonal boron nitride
C. Vergnaud, V. Tiwari, L. Ren +8
Transition metal dichalcogenides (TMD) like MoSe exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth P…
Efficient Electron Spin Relaxation by Chiral Phonons in WSe Monolayers
D. Lagarde, M. Glazov, V. Jindal +9
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay bet…
Brightened emission of dark trions in transition-metal dichalcogenide monolayers
V. Jindal, K. Mourzidis, A. Balocchi +10
The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tu…
Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
T. Clua-Provost, Z. Mu, A. Durand +13
The negatively-charged boron vacancy (V) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) q…