activity
20232026
most citedComplex field-, temperature-, and angle-dependent Hall effects from intrinsic Fermi surface revealed by first-principles calculations

16 citations · 84 across the 22 of their papers we have counts for

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Showing 2025Show all

8 papers · 1 filter

cond-mat.mtrl-sci2025★ 1 cited

Chern-Selective multi-valley Flat Bands in Twisted Mono-Bilayer and Mono-Trilayer MoTe

Ziyue Qi, Hanqi Pi, Yan Zhang +6

The interplay between moiré flat bands originating from different valleys can give rise to a variety of exotic quantum phases. In this work, we investigate the electronic propertie…

cond-mat.mtrl-sci2025★ 2 cited

Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films

Jiaheng Li, Quansheng Wu, Hongming Weng

The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong…

cond-mat.mtrl-sci2025★ 6 cited

Materials discovery acceleration by using condition generative methodology

Caiyuan Ye, Yuzhi Wang, Xintian Xie +10

With the rapid advancement of AI technologies, generative models have been increasingly employed in the exploration of novel materials. By integrating traditional computational app…

cond-mat.mtrl-sci2025★ 4 cited

SDW driven "magnetic breakdown" in a d-wave altermagnet KVSeO

Xu Yan, Ziyin Song, Juntao Song +3

Altermagnets, combining zero net magnetization with intrinsic spin splitting, demonstrate unique quantum phenomena crucial for spintronic applications. KVSeO is proven to b…

cond-mat.mes-hall2025★ 3 cited

High-Chern-number Quantum anomalous Hall insulators in mixing-stacked MnBiTe thin films

Jiaheng Li, Quansheng Wu, Hongming Weng

Quantum anomalous Hall (QAH) insulators are characterized by vanishing longitudinal resistance and quantized Hall resistance in the absence of an external magnetic field. Among the…

cond-mat.mes-hall2025

Observation of topological Anderson Chern insulator phase in MnBiTe monolayer

Anqi Wang, Bo Yin, Zikang Su +23

The correlation of topology and disorder has attracted great intention due to appropriate disorder could induce the phase transition between trivial and nontrivial topological stat…

cond-mat.mtrl-sci2025

Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells

Chenhao Liang, Sheng Zhang, Haohao Sheng +4

In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization fi…

cond-mat.mtrl-sci2025★ 13 cited

Stacking-dependent Electronic and Topological Properties in van der Waals Antiferromagnet MnBiTe Films

Jiaheng Li, Quansheng Wu, Hongming Weng

Combining first-principles calculations and tight-binding Hamiltonians, we study the stack-dependent behaviour of electronic and topological properties of layered antiferromagnet M…