most cited1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

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cond-mat.mtrl-sci2025

The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs

Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou +1

This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study…