most cited1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

2 citations · 2 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2025

The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs

Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou +1

This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study…

physics.app-ph2025★ 2 cited

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis +3

Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In th…