31 citations · 66 across the 25 of their papers we have counts for
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Three-Dimensional Imaging of High-Density Dislocation Networks and Their Interactions using Multislice Electron Ptychography
Eegene Chung, Anand Ithepalli, Naomi Pieczulewski +6
Development of novel devices often involve combining functional materials and substrates, each chosen for particular physical properties such as low-loss or thermal conductivity. T…
Growth and Interface Engineering of Superconducting TiN on Sapphire by Thermal-Laser Epitaxy
Anthony Hyatt, Anand Ithepalli, Eegene Clara Chung +6
Thermal-laser epitaxy (TLE) extends the accessible pressure, temperature, and growth-rate regimes of conventional molecular-beam epitaxy, enabling in situ laser annealing, high-pur…
Fabrication-free assessment of microwave losses in germanium-based dielectrics and superconductors
Haoran Lu, Kushagra Aggarwal, Xiangqin Wang +10
We present a flip-chip-based sensing scheme to measure effective microwave losses associated with target materials for quantum technologies, without requiring any device fabricatio…
High-Q superconducting microwave resonators using MBE titanium nitride
Anand Ithepalli, Haoran Lu, Eegene Clara Chung +9
Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking cu…
Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
Joongwon Lee, Thai-Son Nguyen, Len van Deurzen +8
Alloys of AlN have rapidly emerged as a material platform for nonlinear optics. In this paper, we measure the second-order optical nonlinearity of AlScN films grown directly on nit…
Loss Mechanisms in Cryogenic Microwave Epitaxial AlN Resonators
Hemant Gulupalli, Navnil Choudhury, Jiacheng Xie +6
Epitaxial aluminum nitride (AlN) thin-film bulk acoustic resonators (FBARs) enable low loss filtering for future 6G systems. They also provide a compact approach for qubit sensing…
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
YongJin Cho, Changkai Yu, Huili Grace Xing +1
This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680C by molecular beam epitaxy on a Ga-pola…
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
Yu-Hsin Chen, Thai-Son Nguyen, Isabel Streicher +4
AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron tran…