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20232025
most citedMechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC

1 citations · 1 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2024

Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD

François Cauwet, Yamina Benamra, Laurent Auvray +2

The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4{\textdegree}off substrates was studied. Depending on the polarity of the substrate, differen…

cond-mat.mtrl-sci2023

Epitaxial Growth of Boron Carbide on 4H-SiC

Yamina Benamra, Laurent Auvray, Jérôme Andrieux +6

In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards…