1 citations · 1 across the 3 of their papers we have counts for
3 papers
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +7
Heteroepitaxial boron carbide (BxC) can be grown on Si face 4H-SiC(0001) using a two-step process involving substrate boridation at 1200C under BCl3 + H2 followed by a chem…
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
François Cauwet, Yamina Benamra, Laurent Auvray +2
The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4{\textdegree}off substrates was studied. Depending on the polarity of the substrate, differen…
Epitaxial Growth of Boron Carbide on 4H-SiC
Yamina Benamra, Laurent Auvray, Jérôme Andrieux +6
In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4{\textdegree} off substrate using chemical vapor deposition (CVD) is reported. Towards…