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Application of Scanning Mid-IR-Laser Microscopy for Characterization of Semiconductor Materials for Photovoltaics
V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfu…
Large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +1
Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of elect…
Application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin +1
Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of th…
Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy…
Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a…
On the nature of large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +2
Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulati…