activity
20042023
most citedCMOS back-end-of-line compatible ferroelectric tunnel junction devices

33 citations · 76 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2023★ 6 cited

Sub-10 nm Probing of Ferroelectricity in Heterogeneous Materials by Machine Learning Enabled Contact Kelvin Probe Force Microscopy

Sebastian W. Schmitt, Rama K. Vasudevan, Maurice Seifert +4

Reducing the dimensions of ferroelectric materials down to the nanoscale has strong implications on the ferroelectric polarization pattern and on the ability to switch the polariza…

physics.optics2023★ 3 cited

A fully automatized method for the unambiguous wavelength-by-wavelength determination of the thickness and optical property of a very thin film with a transparent range

Florian Maudet, Charlotte Van Dijck, Muhammad Hamid Raza +1

Spectroscopic ellipsometry is a powerful method with high surface sensitivity that can be used to monitor the growth of even sub-monolayer film. However, the analysis of ultrathin…

cs.ET2022★ 9 cited

A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron

Paolo Gibertini, Luca Fehlings, Suzanne Lancaster +6

Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Ju…

cond-mat.mtrl-sci2022★ 6 cited

Insights on the variability of Cu filament formation in the SiO2 electrolyte of quantized-conductance conductive bridge random access memory devices

Florian Maudet, Veeresh Deshpande, Catherine Dubourdieu

Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multi…

physics.app-ph2021★ 33 cited

CMOS back-end-of-line compatible ferroelectric tunnel junction devices

Veeresh Deshpande, Keerthana Shajil Nair, Marco Holzer +2

Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices w…

cond-mat.mes-hall2021★ 3 cited

Curvature-mediated spin textures in magnetic multi-layered nanotubes

Elisabeth Josten, David Raftrey, Aurelio Hierro-Rodriguez +10

The scientific and technological exploration of artificially designed three-dimensional magnetic nanostructures opens the path to exciting novel physical phenomena, originating fro…