activity
20072019
most citedWetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

32 citations · 42 across the 6 of their papers we have counts for

collaborators

6 papers

physics.app-ph2019

Local electric field induced spin photocurrent in ReS2

Yang Zhang, Yu Wang, Yu Liu +6

Circular polarized photocurrent is observed near the electrodes on a few-layer ReS2sample at room temperature. For both electrodes, the spatial distribution of the circular polariz…

cond-mat.mtrl-sci2017★ 3 cited

Observation of unusual optical band structure of CH3NH3PbI3 perovskite single crystal

Wei Huang, Shizhong Yue, Yu Liu +10

Extensive efforts have been undertaken on the photoelectric physics of hybrid organolead halide perovskites to unveil the reason for the attractive photovoltaic performance. Yet, t…

cond-mat.mes-hall2012★ 32 cited

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Hongyi Zhang, Yonghai Chen, Guanyu Zhou +2

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyze…

cond-mat.mes-hall2011★ 7 cited

Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi two-dimensional electron system

Chongyun Jiang, Yonghai Chen, Hui Ma +2

In this work we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radi…

cond-mat.mes-hall2007

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Jie Sun, Peng Jin, Chang Zhao +5

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal c…

cond-mat.mes-hall2007

Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Jie Sun, Ruoyuan Li, Chang Zhao +5

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current,…