Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots
arXiv:1205.0408 · doi:10.1186/1556-276X-7-600
Abstract
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a monotonic increase at relatively low growth temperatures but a first increase and then decrease at higher temperatures, which were unexpected from the thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD growth was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was also given. Those results gave hints of the kinetic aspects of QD self-assembly.
13 pages, 3 figures
References in corpus (4)
- Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
- Dislocation Free Island Formation in Heteroepitaxial Growth: An Equilibrium Study
- How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)
- Evolution of self-assembled InAs/Gas(001) quantum dots grown by growth-interrupted molecular beam epitaxy