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cond-mat.mes-hall2009★ 294 cited
Etching of Graphene Devices with a Helium Ion Beam
M. C. Lemme, D. C. Bell, J. R. Williams +4
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure a…
cond-mat.mes-hall2007★ 1.1k cited
A Graphene Field-Effect Device
M. C. Lemme, T. J. Echtermeyer, M. Baus +1
In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible…