5 papers · 1 filter
Sub-Micron Gate FinFETs with Current Density 750 mA/mm and Ion/Ioff Ratio
Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7
In this work, we demonstrate submicron-gate FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…
Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
Md Abdul Hamid, Nabasindhu Das, Advait Gilankar +3
We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited…
Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2
Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6
This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…
Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
Advait Gilankar, Julian Gervassi-Saga, Martha R. McCartney +4
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (…
>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
Advait Gilankar, Abishek Katta, Nabasindhu Das +1
This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current stat…