Nabasindhu Das

activity

20242026

collaborators

Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2026

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown

Julian Gervassi Saga, Joshua T Buontempo, Nabasindhu Das +3

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrate…

cond-mat.mtrl-sci2024

In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium

Nabasindhu Das, Fikadu Alema, William Brand +4

In this work, we report on the anisotropic etching characteristics of \b{eta}-Ga2O3 using triethylgallium (TEGa) performed in-situ within an MOCVD chamber. At sufficiently high sub…

β−(Al0.19​Ga0.81​)2​O3​/Ga2​O3​ Modulation-Doped Field-Effect Transistors with > 6 kV Breakdown

In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown