Advait Gilankar

activity

20212026

collaborators

Showing 2026Show all

3 papers · 1 filter

physics.app-ph2026

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$

Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7

In this work, we demonstrate submicron-gate $β - G a_{2} O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…

cond-mat.mtrl-sci2026

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown

Julian Gervassi Saga, Joshua T Buontempo, Nabasindhu Das +3

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrate…

physics.app-ph2026

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate

Md Abdul Hamid, Nabasindhu Das, Advait Gilankar +3

We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited…

Sub-Micron Gate β−Ga2​O3​ FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 109

β−(Al0.19​Ga0.81​)2​O3​/Ga2​O3​ Modulation-Doped Field-Effect Transistors with > 6 kV Breakdown

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate

Sub-Micron Gate $β - G a_{2} O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $1 0^{9}$

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown