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physics.app-ph2024
>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
Advait Gilankar, Abishek Katta, Nabasindhu Das +1
This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current stat…
cond-mat.mtrl-sci2024
In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium
Nabasindhu Das, Fikadu Alema, William Brand +4
In this work, we report on the anisotropic etching characteristics of \b{eta}-Ga2O3 using triethylgallium (TEGa) performed in-situ within an MOCVD chamber. At sufficiently high sub…