Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit

Aqyan A. Bhatti, Dax M. Crum, Amith Valsaraj +2

The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical Monte Carlo method. Illus…