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20232026
most citedUnexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

2 citations · 4 across the 7 of their papers we have counts for

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physics.app-ph2026

Achieving Long Retention in Area-Dependent Resistive Memory with Phase-Separated Amorphous Tantalum Oxide

Sangyong Lee, Anton V. Ievlev, Dongjae Shin +2

Resistive random-access memory (ReRAM) is a promising future nonvolatile memory technology. Most ReRAM exhibit a fundamental tradeoff: filament-type ReRAM provides long data retent…