activity
20232026
most citedUnexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

2 citations · 4 across the 7 of their papers we have counts for

collaborators

9 papers

physics.ins-det2026

Quantitative Interleaved-Pulse Acquisition Extends the Range of Isotope-Ratio Measurements in ToF-SIMS

Anton V. Ievlev

Isotope ratios underpin tracer studies of transport in oxides, battery materials, and biological systems, yet time-of-flight secondary ion mass spectrometry (ToF-SIMS) struggles to…

physics.app-ph2026

Achieving Long Retention in Area-Dependent Resistive Memory with Phase-Separated Amorphous Tantalum Oxide

Sangyong Lee, Anton V. Ievlev, Dongjae Shin +2

Resistive random-access memory (ReRAM) is a promising future nonvolatile memory technology. Most ReRAM exhibit a fundamental tradeoff: filament-type ReRAM provides long data retent…

cond-mat.mtrl-sci2026

PACE-SIMS: Checkpoint-Gated Autonomous SIMS Characterization with AI-Agent Quality Control

Anton V Ievlev, Heather Hare, Yiyang Li +1

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is widely used for local chemical investigations across a broad range of materials and systems. However, its operation is…

cond-mat.mtrl-sci2025★ 1 cited

Rapid synthesis of dual-element isotope-enriched alpha-MoO3 crystals by reactive vapor transport

Ryan W. Spangler, Jacob M. Shusterman, Anton V. Ievlev +3

In this work, we develop a rapid reactive vapor transport technique to efficiently utilize limited isotopically pure precursors, particularly gaseous 18O2, and synthesize mm-scale,…

cond-mat.mtrl-sci2025

Polarization switching on the open surfaces of the wurtzite ferroelectric nitrides: ferroelectric subsystems and electrochemical reactivity

Yongtao Liu, Anton V. Ievlev, Eugene A. Eliseev +5

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From…

cond-mat.mtrl-sci2025

Electronic mobility, doping, and defects in epitaxial chalcogenide perovskite thin films

Jack Van Sambeek, Jessica Dong, Anton V. Ievlev +3

We present the electronic transport properties of (BZS) thin films grown epitaxially by gas-source molecular beam epitaxy (MBE). We observe n-type behavior in al…

cond-mat.mtrl-sci2024★ 2 cited

Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

Sara Bey, Shelby S. Fields, Nicholas G. Combs +10

The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and stron…

cond-mat.mtrl-sci2024★ 1 cited

Coexistence and interplay of two ferroelectric mechanisms in Zn1-xMgxO

Jonghee Yang, Anton V. Ievlev, Anna N. Morozovska +7

Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize informa…

cond-mat.mtrl-sci2023

The interplay between ferroelectricity and electrochemical reactivity on the surface of binary ferroelectric AlBN

Yongtao Liu, Anton Ievlev, Joseph Casamento +5

Polarization dynamics and domain structure evolution in ferroelectric AlBN are studied using piezoresponse force microscopy and spectroscopies in ambient and cont…