11 citations · 11 across the 4 of their papers we have counts for
3 papers · 1 filter
Scalable thru-hole epitaxy of GaN through self-adjusting -BN masks via solution-processed 2D stacks
Jongwoo Ha, Minah Choi, Jieun Yang +1
Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and in…
Moiré exciton polaron engineering via twisted hBN
Minhyun Cho, Biswajit Datta, Kwanghee Han +11
Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess elec…
Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4
Ji-Eun Lee, Aifeng Wang, Shuzhang Chen +13
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for…