activity
20232026
most citedMapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

31 citations · 73 across the 15 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mes-hall2026

Non-perturbative theory of valley splitting in Si qubits from variational wave function: periodic effects of shear strain and asymptotic freedom in the wiggle-well potential

Johannes L. P. Steinschuld, Hendrik J. Bluhm, Seyed Akbar Jafari

Valley splitting sets the energy scale at which spin and valley degrees of freedom hybridize in silicon quantum-well qubits, but its sensitivity to interface structure makes it dif…

cond-mat.mes-hall2026

Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe

Alexander Willmes, Max Oberländer, Max Beer +7

In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…

cond-mat.mes-hall2026

Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer, Ran Xue, Lennart Deda +6

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…

cond-mat.mes-hall2025★ 1 cited

High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…

cond-mat.mes-hall2024★ 10 cited

Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures

Till Huckemann, Pascal Muster, Wolfram Langheinrich +12

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…

cond-mat.mes-hall2024

Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots

Julian Ferrero, Thomas Koch, Sonja Vogel +7

Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still wide…

cond-mat.mes-hall2024★ 23 cited

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Merritt P. Losert, Max Oberländer, Julian D. Teske +5

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently trans…