activity
20242026
most citedHigh yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

1 citations · 1 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2026

Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer, Ran Xue, Lennart Deda +6

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…

cond-mat.mtrl-sci2025

Zeeman-like coupling to valley degree of freedom in Si-based spin qubits

S Akbar Jafari, Hendrik J Bluhm, David P Divincenzo

Increasing the valley splitting in Si-based heterostructures is critical for improving the performance of semiconductor qubits. This paper demonstrates that the two low-energy cond…

cond-mat.mes-hall20251 cited

High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…

quant-ph2025

Performance of the spin qubit shuttling architecture for a surface code implementation

Berat Yenilen, Arnau Sala, Hendrik Bluhm +2

Qubit shuttling promises to advance some quantum computing platforms to the qubit register sizes needed for effective quantum error correction (QEC), but also introduces additional…

quant-ph2024

Long distance spin shuttling enabled by few-parameter velocity optimization

Alessandro David, Akshay Menon Pazhedath, Lars R. Schreiber +3

Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley d…