activity
20232026
most citedMapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

31 citations · 73 across the 15 of their papers we have counts for

collaborators

16 papers

cond-mat.mes-hall2026

Non-perturbative theory of valley splitting in Si qubits from variational wave function: periodic effects of shear strain and asymptotic freedom in the wiggle-well potential

Johannes L. P. Steinschuld, Hendrik J. Bluhm, Seyed Akbar Jafari

Valley splitting sets the energy scale at which spin and valley degrees of freedom hybridize in silicon quantum-well qubits, but its sensitivity to interface structure makes it dif…

cond-mat.mtrl-sci2026

Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon

Johannes L. P. Steinschuld, Hendrik J. Bluhm, Lars R. Schreiber +1

We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or externa…

cond-mat.mes-hall2026

Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe

Alexander Willmes, Max Oberländer, Max Beer +7

In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…

quant-ph2026

Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling

Mats Volmer, Tom Struck, Arnau Sala +7

As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimens…

cond-mat.mes-hall2026

Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer, Ran Xue, Lennart Deda +6

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…

cond-mat.mtrl-sci2025

Zeeman-like coupling to valley degree of freedom in Si-based spin qubits

S Akbar Jafari, Hendrik J Bluhm, David P Divincenzo

Increasing the valley splitting in Si-based heterostructures is critical for improving the performance of semiconductor qubits. This paper demonstrates that the two low-energy cond…

quant-ph2025★ 3 cited

Impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in Si/SiGe

Mats Volmer, Tom Struck, Jhih-Sian Tu +6

Silicon quantum chips offer a promising path toward scalable, fault-tolerant quantum computing, with the potential to host millions of qubits. However, scaling up dense quantum-dot…

cond-mat.mes-hall2025★ 1 cited

High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…

quant-ph2025

Performance of the spin qubit shuttling architecture for a surface code implementation

Berat Yenilen, Arnau Sala, Hendrik Bluhm +2

Qubit shuttling promises to advance some quantum computing platforms to the qubit register sizes needed for effective quantum error correction (QEC), but also introduces additional…

cond-mat.mes-hall2024★ 10 cited

Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures

Till Huckemann, Pascal Muster, Wolfram Langheinrich +12

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…

quant-ph2024

Long distance spin shuttling enabled by few-parameter velocity optimization

Alessandro David, Akshay Menon Pazhedath, Lars R. Schreiber +3

Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley d…

cond-mat.mes-hall2024

Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots

Julian Ferrero, Thomas Koch, Sonja Vogel +7

Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still wide…

cond-mat.mes-hall2024★ 23 cited

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Merritt P. Losert, Max Oberländer, Julian D. Teske +5

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently trans…

quant-ph2024★ 4 cited

Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor

Florian Ginzel, Michael Fellner, Christian Ertler +3

Motivated by the prospect of a two-dimensional square-lattice geometry for semiconductor spin qubits, we explore the realization of the Parity Architecture with quantum dots (QDs).…

quant-ph2024★ 1 cited

Large spin shuttling oscillations enabling high-fidelity single qubit gates

Akshay Menon Pazhedath, Alessandro David, Max Oberländer +4

Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still r…

quant-ph2023★ 31 cited

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

Mats Volmer, Tom Struck, Arnau Sala +10

In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local…