4 citations · 5 across the 6 of their papers we have counts for
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Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
Linqiang Xu, Yue Hu, Lianqiang Xu +6
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
Linqiang Xu, Liya Zhao, Chit Siong Lau +7
Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact…
Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
Linqiang Xu, Shiqi Liu, Qiuhui Li +6
Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1)…
Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors
Ying Li, Yang Shen, Linqiang Xu +7
Sub-1-nm gate length transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the s…