Lianqiang Xu

collaborators

4 papers

cond-mat.mtrl-sci2024

Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes

Linqiang Xu, Yue Hu, Lianqiang Xu +6

Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…

cond-mat.mes-hall2024

Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS

Linqiang Xu, Liya Zhao, Chit Siong Lau +7

Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact…

physics.app-ph2023

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications

Linqiang Xu, Lianqiang Xu, Jun Lan +7

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…

cond-mat.mtrl-sci2023

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Linqiang Xu, Lianqiang Xu, Qiuhui Li +7

Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…

Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes

Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS

Sub-5-nm Ultra-thin In2​O3​ Transistors for High-Performance and Low-Power Electronic Applications

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications