2 papers
cond-mat.mtrl-sci2024
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
Linqiang Xu, Yue Hu, Lianqiang Xu +6
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…
cond-mat.mes-hall2024
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
Linqiang Xu, Liya Zhao, Chit Siong Lau +7
Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact…