1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2024
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
Linqiang Xu, Yue Hu, Lianqiang Xu +6
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…
cond-mat.dis-nn2024★ 1 cited
Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistor
Xiuying Zhang, Linqiang Xu, Jing Lu +2
Quantum-mechanics-based transport simulation is of importance for the design of ultra-short channel field-effect transistors (FETs) with its capability of understanding the physica…