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20242026
most citedDirect Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

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physics.optics2024

Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K

Jie Zhou, Daniel Vincent, Sudip Acharya +16

Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been b…

physics.optics2024

Electrically Injected mid-infrared GeSn laser on Si operating at 140 K

Sudip Acharya, Hryhorii Stanchu, Rajesh Kumar +6

Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. D…