1 citations · 1 across the 8 of their papers we have counts for
8 papers
Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection
Hryhorii Stanchu, Quang Minh Thai, Rajesh Kumar +16
As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-ox…
Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Abdulla Said Ali +13
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth…
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…
Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
Jie Zhou, Daniel Vincent, Sudip Acharya +16
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been b…
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Yang Liu, Jiarui Gong, Sudip Acharya +12
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequa…
AlGaAs/GeSn p-i-n diode interfaced with ultrathin AlO
Yang Liu, Yiran Li, Sudip Acharya +9
This study presents the fabrication and characterizations of an AlGaAs/GeSn/GeSn p-i-n double heterostructure (DHS) diode following the grafting a…
Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
Sudip Acharya, Hryhorii Stanchu, Rajesh Kumar +6
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. D…