3 citations · 4 across the 12 of their papers we have counts for
8 papers · 1 filter
Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tuneable response time
Ajoy Biswas, Amandeep Kaur, Bhabani Prasad Sahu +5
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) β-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN…
CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications
Umakanta Patra, Subhrajit Sikdar, Roshan Padhan +3
Demand for lower computing power has rapidly increased. In this context, brain-inspired neuromorphic computing, which integrate data storage and processing, has attracted significa…
Spontaneous growth of perfectly circular domains of MoS2 monolayers using chemical vapour deposition technique
Umakanta Patra, Subhabrata Dhar
Very large-scale integration of devices in a circular pattern has several advantages over the commonly used rectangular grid layout. For the development of such integrated circuits…
Experimental demonstration of two distinct pathways of trion generation in monolayer MoS2
Faiha Mujeeb, Arkaprava Chowdhury, Anindya Datta +1
Excitation power and energy dependent photoluminescence (PL) and transient absorption spectroscopy (TAS) studies are carried out on chemical vapour deposition (CVD) grown 1L-MoS2 f…
Controlled Growth of large area bilayer MoS films on SiO substrates by chemical vapour deposition technique
Umakanta Patra, Faiha Mujeeb, Abhiram K +2
Bilayer (2L) transition metal dichalcogenides (TMD) have the ability to host interlayer excitons, where electron and hole parts are spatially separated that leads to much longer li…
p-(001)NiO/n-(0001)ZnO heterostructures grown by pulsed laser deposition technique
Bhabani Prasad Sahu, Amandeep Kaur, Simran Arora +1
NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along…
Influence of strain and point defects on the electronic structure and related properties of (111)NiO epitaxial films
Bhabani Prasad Sahu, Poonam Sharma, Santosh Kumar Yadav +2
(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two…
Network of vertically c-oriented prism shaped InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique
B. K. Barick, Rajendra Kumar Saroj, Nivedita Prasad +1
Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitro…