activity
20142026
most citedNetwork of vertically c-oriented prism shaped InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

3 citations · 4 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2026

Nanoscale mapping of stacking-dependent work function and local photoresponse in CVD-grown MoS2 bilayers by KPFM

Anagha Gopinath, Faiha Mujeeb, Subhabrata Dhar +1

Stacking order in bilayers of transition metal dichalcogenides (TMDs) controls structural symmetry and layer-to-layer interactions, offering a direct route to tune their electronic…

cond-mat.mtrl-sci2026

Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tuneable response time

Ajoy Biswas, Amandeep Kaur, Bhabani Prasad Sahu +5

n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) β-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN…

cond-mat.mtrl-sci2026

CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications

Umakanta Patra, Subhrajit Sikdar, Roshan Padhan +3

Demand for lower computing power has rapidly increased. In this context, brain-inspired neuromorphic computing, which integrate data storage and processing, has attracted significa…

cond-mat.mtrl-sci2026

Spontaneous growth of perfectly circular domains of MoS2 monolayers using chemical vapour deposition technique

Umakanta Patra, Subhabrata Dhar

Very large-scale integration of devices in a circular pattern has several advantages over the commonly used rectangular grid layout. For the development of such integrated circuits…

cond-mat.mes-hall2025

High-energy electron-beam induced defect engineering of monolayer MoS2 for tunable optical properties

Anagha Gopinath, Faiha Mujeeb, Subhabrata Dhar +1

Structural defects in 2D-transition metal dichalcogenides are critical in modulating their optical and electrical behavior. Nevertheless, precise defect control within the monolaye…

cond-mat.mtrl-sci2025

Experimental demonstration of two distinct pathways of trion generation in monolayer MoS2

Faiha Mujeeb, Arkaprava Chowdhury, Anindya Datta +1

Excitation power and energy dependent photoluminescence (PL) and transient absorption spectroscopy (TAS) studies are carried out on chemical vapour deposition (CVD) grown 1L-MoS2 f…

physics.app-ph2024

p-(001)NiO/n-(0001)ZnO Heterostructures based Ultraviolet Photodetectors

Amandeep Kaur, Bhabani Prasad Sahu, Ajoy Biswas +1

We investigate the potential of epitaxial (001)p-NiO/(0001)n-ZnO heterostructures grown on (0001)sapphire substrates by pulsed laser deposition technique for ultraviolet photodetec…

cond-mat.mtrl-sci2024

Controlled Growth of large area bilayer MoS films on SiO substrates by chemical vapour deposition technique

Umakanta Patra, Faiha Mujeeb, Abhiram K +2

Bilayer (2L) transition metal dichalcogenides (TMD) have the ability to host interlayer excitons, where electron and hole parts are spatially separated that leads to much longer li…

cond-mat.mtrl-sci2024

p-(001)NiO/n-(0001)ZnO heterostructures grown by pulsed laser deposition technique

Bhabani Prasad Sahu, Amandeep Kaur, Simran Arora +1

NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along…

cond-mat.mtrl-sci2024

Influence of strain and point defects on the electronic structure and related properties of (111)NiO epitaxial films

Bhabani Prasad Sahu, Poonam Sharma, Santosh Kumar Yadav +2

(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two…

cond-mat.mtrl-sci2017★ 3 cited

Network of vertically c-oriented prism shaped InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

B. K. Barick, Rajendra Kumar Saroj, Nivedita Prasad +1

Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitro…

cond-mat.mes-hall2014★ 1 cited

Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

H. P. Bhasker, Varun Thakur, S. M. Shivaprasad +1

The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network sampl…