activity
20022023
most citedHighly conductive molecular junctions based on direct binding of benzene to platinum electrodes

316 citations · 535 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2023★ 7 cited

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

André Hochreiter, Fabian Groß, Morris-Niklas Möller +2

Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of photonic quantum technologies, nano-m…

cond-mat.mtrl-sci2011★ 7 cited

Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

Daniel Waldmann, Johannes Jobst, Felix Fromm +4

We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which g…

cond-mat.mes-hall2008★ 316 cited

Highly conductive molecular junctions based on direct binding of benzene to platinum electrodes

M. Kiguchi, O. Tal, S. Wohlthat +5

Highly conductive molecular junctions were formed by direct binding of benzene molecules between two Pt electrodes. Measurements of conductance, isotopic shift in inelastic spectro…

cond-mat.mes-hall2008★ 171 cited

Electron-vibration interaction in single-molecule junctions: from contact to tunneling regime

O. Tal, M. Krieger, B. Leerink +1

Point contact spectroscopy on a H2O molecule bridging Pt electrodes reveals a clear crossover between enhancement and reduction of the conductance due to electron-vibration interac…

cond-mat.mtrl-sci2002★ 34 cited

Curie temperature and carrier concentration gradients in MBE grown GaMnAs layers

A. Koeder, S. Frank, W. Schoch +10

We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy.…