P. John

activity

20232026

1 1 ˉ 00

): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

11 citations · 19 across the 6 of their papers we have counts for

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cond-mat.mtrl-sci2024

Growth of compositionally uniform $In_{x} Ga_{1 - x} N$ layers with low relaxation degree on GaN by molecular beam epitaxy

Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7

500-nm-thick $In_{x} Ga_{1 - x} N$ layers with $x =$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…

physics.app-ph2024

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators

N. Buatip, T. Auzelle, P. John +8

In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitatio…

cond-mat.mtrl-sci2024★ 11 cited

ScN/GaN( $1 1 ˉ 00$ ): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Philipp John, Achim Trampert, Duc Van Dinh +6

We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN( $1 1 ˉ 00$ ) surface. To this end, ScN is grown on free-standing GaN( $1 1 ˉ 00$ ) substrates and self-ass…

Growth of compositionally uniform Inx​Ga1−x​N layers with low relaxation degree on GaN by molecular beam epitaxy

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators

ScN/GaN(11ˉ00): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Growth of compositionally uniform $In_{x} Ga_{1 - x} N$ layers with low relaxation degree on GaN by molecular beam epitaxy

ScN/GaN( $1 1 ˉ 00$ ): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures