D. V. Dinh

activity

20222026

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N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

62 citations · 64 across the 8 of their papers we have counts for

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cond-mat.mtrl-sci2024

Crack-free Sc $_{x}$ Al $_{1 - x}$ N(000 $1 ˉ$ ) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Zhuohui Chen, Oliver Brandt

We investigate the synthesis of 340-nm-thick Sc $_{x}$ Al $_{1 - x}$ N layers with $0 \leq x \leq 0.35$ on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN…

cond-mat.mtrl-sci2024

Growth of compositionally uniform $In_{x} Ga_{1 - x} N$ layers with low relaxation degree on GaN by molecular beam epitaxy

Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7

500-nm-thick $In_{x} Ga_{1 - x} N$ layers with $x =$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…

Crack-free Scx​Al1−x​N(0001ˉ) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

Growth of compositionally uniform Inx​Ga1−x​N layers with low relaxation degree on GaN by molecular beam epitaxy

Crack-free Sc $_{x}$ Al $_{1 - x}$ N(000 $1 ˉ$ ) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

Growth of compositionally uniform $In_{x} Ga_{1 - x} N$ layers with low relaxation degree on GaN by molecular beam epitaxy