62 citations · 64 across the 8 of their papers we have counts for
10 papers
Large in-plane optical anisotropy in epitaxial CrN(113) films
Duc V. Dinh, Frank Peiris, Oliver Brandt
CrN, a transition-metal nitride crystallizing in the cubic rocksalt structure, exhibits a unique combination of mechanical robustness, semiconducting behavior, and thermoelectric f…
Interplay between growth conditions and formation of localized light emitters in epitaxial AlN thin films
Meysam Saeedi, Duc V. Dinh, Andrey N. Anisimov +3
AlN is a promising material for integrated quantum photonics due to its broad transparency window, its compatibility with CMOS technology, and the possibility to host localized lig…
Reststrahlen band and optical bandgaps in semiconducting CrN films
Duc V. Dinh, Xiang Lü, Oliver Brandt +8
We present a comprehensive optical characterization of 200-nm-thick CrN(111) films grown simultaneously on AlO(0001) and AlN/AlO(0001) using plasma-assisted molecul…
Carrier transport and electrical bandgaps in epitaxial CrN layers
Duc V. Dinh, Jens Herfort, Andreas Fiedler +1
The transport properties and electrical bandgap of nominally undoped ~75-nm-thick CrN layers simultaneously grown on AlN(0001) and AlN(11\bar{2}2) templates using plasma-assisted m…
Rock-salt ScN(113) layers grown on AlN by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Esperanza Luna, Oliver Brandt
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel p…
Crack-free ScAlN(000) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Zhuohui Chen, Oliver Brandt
We investigate the synthesis of 340-nm-thick ScAlN layers with on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN…
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…
Electrical properties of ScN(111) layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Oliver Brandt
We investigate the electrical properties of nominally undoped, 10-40-nm-thick ScN(111) layers grown on nearly lattice-matched GaN:Fe/AlO(0001) templates by plasma-assisted…
Optical properties of ScN layers grown on AlO(0001) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Frank Peiris, Jonas Lähnemann +1
An accurate knowledge of the optical constants (refractive index and extinction coefficient ) of ScN is crucial for understanding the optical properties of this binary nitri…
Lattice parameters of ScAlN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar +1
An accurate knowledge of the lattice parameters of the new nitride ScAlN is essential for understanding the elastic and piezoelectric properties of this…