4 papers · 1 filter
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Huaide Zhang, Jingxuan Kang, Aidan F. Campbell +3
(In,Ga)N layers are grown by plasma-assisted molecular beam epitaxy on GaN templates. We introduce a two-step protocol that involves switching the growth conditions from initially…
Fabrication of (In,Ga)N pseudo-substrates by a three-step growth protocol without ex-situ processing
Huaide Zhang, Aidan F. Campbell, Jingxuan Kang +3
We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change grow…
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
Jingxuan Kang, Rose-Mary Jose, Miriam Oliva +6
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation…