activity
20022008
most citedReal-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads

95 citations · 281 across the 4 of their papers we have counts for

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6 papers · 1 filter

cond-mat.mes-hall200751 cited

Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy

M. G. Pala, B. Hackens, F. Martins +4

We study the relationship between the local density of states (LDOS) and the conductance variation in scanning-gate-microscopy experiments on mesoscopic structures as a charge…

cond-mat.mes-hall200772 cited

Imaging Electron Wave Functions Inside Open Quantum Rings

F. Martins, B. Hackens, M. G. Pala +8

Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density in embedded mesoscopic q…

cond-mat.mes-hall2004

Effect of dephasing on the current statistics of mesoscopic devices

Marco G. Pala, Giuseppe Iannaccone

We investigate the effects of dephasing on the current statistics of mesoscopic conductors with a recently developed statistical model, focusing in particular on mesoscopic cavitie…

cond-mat.mes-hall2003

Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism

Marco G. Pala, Giuseppe Iannaccone

We propose a phenomenological model of dephasing in mesoscopic transport, based on the introduction of random phase fluctuations in the computation of the scattering matrix of the…

cond-mat.mes-hall2003

Two-dimensional hole precession in an all-semiconductor spin field effect transistor

Marco G. Pala, Michele Governale, Jürgen König +2

We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagneti…

cond-mat.mes-hall2002

Universal Rashba Spin Precession of Two-Dimensional Electrons and Holes

Marco G. Pala, Michele Governale, Jürgen König +1

We study spin precession due to Rashba spin splitting of electrons and holes in semiconductor quantum wells. Based on a simple analytical expression that we derive for the current…