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19992023
most citedSuperconducting proximity effect in interacting double-dot systems

117 citations · 1.1k across the 35 of their papers we have counts for

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26 papers · 1 filter

cond-mat.mes-hall2022

Minimum thermal conductance of twisted-layer graphite nanofibers

Van-Truong Tran, Thanh-Tra Vu, Philippe Dollfus +2

We study the thermal transport properties of twisted-layer graphite nanofibers. We show that in the presence of a twisted layer, the phonon thermal conductance of a graphite nanofi…

cond-mat.mes-hall2022

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Debora Pierucci, Aymen Mahmoudi, Mathieu Silly +10

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we rep…

cond-mat.mes-hall2021

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

Demetrio Logoteta, Jiang Cao, Marco Pala +2

We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With…

cond-mat.mes-hall2021★ 12 cited

Dissipative Transport and Phonon Scattering Suppression via Valley Engineering in Single-Layer Antimonene and Arsenene Field-Effect Transistors

Jiang Cao, Yu Wu, Hao Zhang +3

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced el…

cond-mat.mes-hall2020

Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys

Cyrine Ernandes, Lama Khalil, Hela Almabrouk +12

In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a…

cond-mat.mes-hall2020

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Demetrio Logoteta, Jiang Cao, Marco Pala +3

The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations…

cond-mat.mes-hall2020★ 33 cited

A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect

D. Logoteta, M. G. Pala, J. Choukroun +2

We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energ…

cond-mat.mes-hall2018★ 26 cited

High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions

Jean Choukroun, Marco Pala, Shiang Fang +2

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's function…

cond-mat.mes-hall2015★ 8 cited

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

P. Liu, F. Martins, B. Hackens +6

The disordered potential landscape in an InGaAs/InAlAs two-dimensional electron gas patterned into narrow wires is investigated by means of scanning gate microscopy. It is found th…

cond-mat.mes-hall2013

Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

S. Huant, S. Baltazar, P. Liu +7

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network…

cond-mat.mes-hall2013★ 28 cited

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow +7

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling bet…

cond-mat.mes-hall2013★ 22 cited

Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island

F. Martins, S. Faniel, B. Rosenow +7

We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers.…

cond-mat.mes-hall2012★ 12 cited

A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks

Marco Pala, Hermann Sellier, Benoit Hackens +3

The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve congestion can counter-…

cond-mat.mes-hall2012★ 53 cited

Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox

M. G. Pala, S. Baltazar, P. Liu +7

We present evidence for a counter-intuitive behavior of semiconductor mesoscopic networks that is the analog of the Braess paradox encountered in classical networks. A numerical si…

cond-mat.mes-hall2011★ 90 cited

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Hermann Sellier, Benoit Hackens, Marco Pala +6

This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the…

cond-mat.mes-hall2010★ 89 cited

Spin-orbit coupling and phase-coherence in InAs nanowires

S. Estévez Hernández, M. Akabori, K. Sladek +7

We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctua…

cond-mat.mes-hall2010

Scanning-gate microscopy of semiconductor nanostructures: an overview

F. Martins, B. Hackens, H. Sellier +7

This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of t…

cond-mat.mes-hall2010★ 117 cited

Superconducting proximity effect in interacting double-dot systems

James Eldridge, Marco G. Pala, Michele Governale +1

We study subgap transport from a superconductor through a double quantum dot with large on-site Coulomb repulsion to two normal leads. Non-local superconducting correlations in the…

cond-mat.mes-hall2010★ 61 cited

Superconducting proximity effect in interacting quantum dots revealed by shot noise

Alessandro Braggio, Michele Governale, Marco G. Pala +1

We study the full counting statistics of charge transport through a quantum dot tunnel-coupled to one normal and one superconducting lead with a large superconducting gap. As funct…

cond-mat.mes-hall2007★ 51 cited

Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy

M. G. Pala, B. Hackens, F. Martins +4

We study the relationship between the local density of states (LDOS) and the conductance variation in scanning-gate-microscopy experiments on mesoscopic structures as a charge…

cond-mat.mes-hall2007★ 72 cited

Imaging Electron Wave Functions Inside Open Quantum Rings

F. Martins, B. Hackens, M. G. Pala +8

Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density in embedded mesoscopic q…

cond-mat.mes-hall2004★ 28 cited

Rashba spin precession in quantum Hall edge channels

Marco G. Pala, Michele Governale, Ulrich Zülicke +1

Quasi--one dimensional edge channels are formed at the boundary of a two-dimensional electron system subject to a strong perpendicular magnetic field. We consider the effect of Ras…

cond-mat.mes-hall2004★ 21 cited

Effect of dephasing on the current statistics of mesoscopic devices

Marco G. Pala, Giuseppe Iannaccone

We investigate the effects of dephasing on the current statistics of mesoscopic conductors with a recently developed statistical model, focusing in particular on mesoscopic cavitie…

cond-mat.mes-hall2003★ 24 cited

Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism

Marco G. Pala, Giuseppe Iannaccone

We propose a phenomenological model of dephasing in mesoscopic transport, based on the introduction of random phase fluctuations in the computation of the scattering matrix of the…